Measuring apparatus and film formation method
US6537832B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2001 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | May 1, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/0675
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A film formation monitor of a plasma CVD apparatus includes a light source for generating measuring light. Measuring light generated from the light source is guided to an optical system having lenses and mirrors, and is irradiated to a silicon substrate at a plurality of angles of incidence with the back of the silicon substrate being substantially a focus. Reflected light from the substrate is incident into a spectroscope. An intensity of measuring light is detected for each wavelength. A calculation apparatus calculates an etching depth. Reflected light from the back of the substrate interferes with reflected light from an etchd surface. To reduce influences of reflected light from the back of the substrate, measuring light is irradiated while its angle of incidence is varied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.