SOI transistor with body contact and method of forming same

US6537861B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Karl-Eugen Kroell · Altdorf, DE
• Juergen Pille · Stuttgart, DE
• Helmut Schettler · Waldenbuch, DE

Key dates

• Filing date: Aug 24, 1999
• Grant date: Mar 25, 2003
• Expiry date: Aug 24, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/711

Abstract

An SOI field effect transistor is provided comprising a body contact that is isolated by a shallow trench that is formed into the body portion of the transistor, thereby eliminating any increase in gate capacitance or delay. A method of forming such a transistor is provided that does not require any additional process steps.