Semiconductor device and process of fabricating same
US6537865B2 · kind B2 · utility
3Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2001 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Aug 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
Abstract
A semiconductor device fabrication process includes forming a Schottky layer, a cap layer covering the surface of the Schottky layer, and a Schottky electrode of a two-level structure having a lower portion that penetrates through the cap layer and reaches the Schottky layer, and having an upper portion larger than the lower portion in cross-sectional area and that overlies the cap layer. With this construction, surface defects are unlikely to occur, so that a highly reliable semiconductor device can be fabricated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.