High speed low voltage semiconductor devices and method of fabrication
US6537867B1 · kind B1 · utility
6Cited by
5References
37Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 2, 2000 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Aug 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A digit signal processor capable of operating at 100 MHZ with a 1.0 volt power supply. The digital signal processor is fabricated by application of strong phase-shift lithography to obtain a 0.12 &mgr;m gate dimension. A dual-mask process is utilized to improve resolution thereby producing high speed, low-voltage processors. A n+/p+ dual-Poly:Si module, and dopant penetration suppression techniques may be utilized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.