Patent · US Expired

Integrated circuit comprising a memory cell of the DRAM type, and fabrication process

US6537873B2 · kind B2 · utility

2Cited by
10References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 11, 2002
Grant dateMar 25, 2003
Priority date—
Expiry dateJan 11, 2022

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B12/373
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The integrated circuit comprises a semiconductor substrate SB supporting a memory cell PM of the DRAM type comprising an access transistor T and a storage capacitor TRC. The access transistor is made on the substrate, and the substrate includes a capacitive trench TRC buried beneath the transistor and forming the storage capacitor, the capacitive trench being in contact with one of the source and drain regions of the transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.