Integrated semiconductor optic sensor device

US6538267B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Matteo Bordogna · Vimercate, IT
• Enrico Laurin · Monza, IT
• Oreste Bernardi · Mascalucia, IT

Key dates

• Filing date: Oct 3, 2001
• Grant date: Mar 25, 2003
• Expiry date: Oct 3, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/1825

Abstract

The invention relates to a process for manufacturing a light sensor device in a standard CMOS process, including, implanting active areas on a semiconductor substrate to obtain a first integrated region of a corresponding photosensor; and forming a stack of layers having different thickness and refractive index layers over the photosensor to provide interferential filters for the same photosensor. At least one of the above mentioned layers is formed by a transparent metallic oxide having a high refraction index and a corresponding high dielectric constant. In this manner, due to the transparency of the high refraction index material, the design of interferential resonators is rendered more flexible making possible the use of a stack of layers including more than one high refraction index layer.