Patent · US Expired

Trenched semiconductor device with high breakdown voltage

US6538294B1 · kind B1 · utility

4Cited by

24References

8Claims

0Family size

Assignee

Telefonaktiebolaget LM Ericsson (Publ) · SE

Inventors

Håkan Sjödin · Knivsta, SE
Anders Soderbarg · Uppsala, SE

Key dates

Filing date	Jun 21, 2000
Grant date	Mar 25, 2003
Priority date	—
Expiry date	Jun 21, 2020

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/17
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An arrangement in a semiconductor component includes a highly doped layer on a substrate layer and is delimited by at least one trench extending from the surface of the component through the highly doped layer. A sub-layer between the substrate layer and the highly doped layer is doped with the same type of dopant as the buried collector, but to a lower concentration. The sub-layer causes a more even distribution of the potential lines in the substrate and in a sub-collector layer, thereby eliminating areas of dense potential lines and increasing the breakdown voltage of the component, (i.e., because the breakdown voltage is lower in areas with dense potential lines).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.