Lead frame and semiconductor device using the same
US6538303B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 29, 2000 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Feb 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device, an island penetrating hole, which is larger than a mounted chip, is formed on an island of a lead frame, and a heatsink is mounted on the island so as to cover the island penetrating hole. The chip is disposed on a surface of the heatsink in the island penetrating hole. The ground terminal of the chip and the island are wire-bonded to each other via GND wires. This arrangement makes it possible to reduce a heat resistance in a heat-releasing path, thereby improving a heat-releasing property. Further, the GND wires are shortened and a GND inductance is reduced. Consequently, it is possible to efficiently exert capability of the chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.