Field emitting device comprising field-concentrating nanoconductor assembly and method for making the same
US6538367B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 1999 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Aug 6, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/939
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This invention is predicated on applicants' discovery that a highly oriented nanoconductor structure alone does not guarantee efficient field emission. To the contrary, the conventional densely populated, highly oriented structures actually yield relatively poor field emission characteristics. Applicants have determined that the individual nanoconductors in conventional assemblies are so closely spaced that they shield each other from effective field concentration at the ends, thus diminishing the driving force for efficient electron emission.In accordance with the invention, an improved field emitting nanoconductors assembly (a “low density nanoconductor assembly”) comprises an array of nanoconductors which are highly aligned but spaced from each other no closer than 10% of the height of the nanoconductors. In this way, the field strength at the ends will be at least 50% of the maximal field concentration possible. Several ways of making the optimally low density assemblies are described along with several devices employing the assemblies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.