Voltage biased section of non-linear transmission line
US6538525B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 19, 2000 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Feb 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K1/0237
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The principal reason that commercially available 10 gigabits per second electrical interconnect has not previously been available is that such interconnect structures possess too high a level of parasitic inductance, capacitance, resistance and conductance. These result in signal degradation as a result of attenuation, harmonic distortion and dispersion and so sufficiently error-free transmission of data has been virtually impossible for high data rates such as those around 5 gigabits per second and above. By providing compensation mechanisms, signal integrity is improved thus enabling reliable data transmission at data rates of 5 gigabits per second, 10 gigabits per second and above. Non-linear transmission lines are used to form these compensation mechanisms. The non-linear transmission line may take the form of a distributed diode, for example, formed from a layer of N-doped silicon covered on its top surface by a layer of platinum and on its bottom surface by a layer of silicon dioxide. Advantageously, voltage biased sections of NLTL are used to perform compensation for different regions of a signal pulse according to the particular voltage biasing used. A plurality of such vol…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.