Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases
US6540930B2 · kind B2 · utility
5Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2001 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Sep 6, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of using reactive gases containing a perfluoroketone having 4 to 7 carbon atoms for removing unwanted deposits that build up in a vapor reactor, for etching dielectric and metallic materials in a vapor reactor, and for doping a material in a vapor reactor are described. The perfluoroketones perform as well as or better than the standard perfluorocarbons used in the semiconductor industry but have minimal impact on global warming.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.