Vacuum ultraviolet transmitting direct deposit vitrified silicon oxyfluoride lithography glass photomask blanks
US6541168B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2001 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Jul 24, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P40/57
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
High purity direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive direct deposit vitrified silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a dry direct deposit vitrified silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.