Semiconductor device and manufacturing method thereof
US6541348B1 · kind B1 · utility
4Cited by
4References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 4, 2002 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Feb 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Gettering layers are formed near element isolation insulating films in an active layer on a buried oxide film. The gettering layers trap mainly heavy metals diffused from the element isolation insulating films into the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.