Method for forming silicon film
US6541354B1 · kind B1 · utility
58Cited by
5References
21Claims
0Family size
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Key dates
| Filing date | Nov 30, 2000 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Nov 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02675
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A solution containing a cyclic silane compound, which does not contain carbon, and/or a silane compound modified by boron or phosphorus is applied onto a substrate and a silicon precursor film is formed, and the film is then transformed into semiconductor silicon by heat and/or light treatment. Thereby, it is possible to easily produce a silicon film having satisfactory characteristics as an electronic material at low costs, differing from the vacuum process, such as by CVD methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.