Near field optical probe and manufacturing method thereof
US6541755B1 · kind B1 · utility
8Cited by
1References
41Claims
0Family size
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Key dates
| Filing date | Nov 24, 1999 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Nov 24, 2019 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y35/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In a near field optical probe, a through hole having an aperture is provided in a semiconductor photodetector including at least a first-conductive-type high-concentration impurity layer, a first-conductive-type low-concentration impurity layer and a second-conductivity impurity-introduced region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.