Semiconductor device having non-power enhanced and power enhanced metal oxide semiconductor devices and a method of manufacture therefor
US6541819B2 · kind B2 · utility
81Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 2001 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | May 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
The present invention provides a semiconductor device and a method of manufacture therefor. The semiconductor device includes a non-power enhanced metal oxide semiconductor (non-PEMOS) device having first source/drain regions located in a semiconductor substrate, wherein the first source/drain regions include a first dopant profile. The semiconductor device further includes a power enhanced metal oxide semiconductor (PEMOS) device located adjacent the non-PEMOS device and having second source/drain regions located in the semiconductor substrate, wherein the second source/drain regions include the first dopant profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.