Semiconductor radiation detector with internal gain
US6541836B2 · kind B2 · utility
33Cited by
3References
33Claims
0Family size
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Key dates
| Filing date | Apr 16, 2001 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Jun 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/00
Abstract
An avalanche drift photodetector (ADP) incorporates extremely low capacitance of a silicon drift photodetector (SDP) and internal gain that mitigates the surface leakage current noise of an avalanche photodetector (APD). The ADP can be coupled with scintillators such as CsI(Tl), NaI(Tl), LSO or others to form large volume scintillation type gamma ray detectors for gamma ray spectroscopy, photon counting, gamma ray counting, etc. Arrays of the ADPs can be used to replace the photomultiplier tubes (PMTs) used in conjunction with scintillation crystals in conventional gamma cameras for nuclear medical imaging.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.