Microelectronics structure comprising a low voltage part provided with protection against a high voltage part and method for obtaining said protection
US6541839B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 10, 2000 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Mar 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/763
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic structure with a low voltage part and high voltage part, such that the low voltage part is protected against the high voltage part and process of obtaining this protection.The structure includes at least one low-voltage element (2) and at least high-voltage element (4) formed on a semi-conductor substrate (6). According to the invention, at least one channel (18) is formed, passing through the low-voltage element and one semi-conductor zone is formed with doping opposite to that of the substrate, at least around the walls of the channel or channels and a contact point (24) is established in this zone. Application to smart power integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.