Semiconductor device manufacturing method including forming step of SOI structure and semiconductor device having SOI structure
US6541861B2 · kind B2 · utility
40Cited by
11References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2001 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Jun 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor manufacturing method has the steps of preparing an SOI substrate having a supporting substrate, an insulating film formed above the supporting substrate, a semiconductor region formed above the insulating film, and an intermediate layer formed between the supporting substrate and the insulating film, forming a semiconductor element in the semiconductor region, and removing the intermediate layer to separate the supporting substrate and the semiconductor region in which the semiconductor element is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.