Backswitch poling method for domain patterning of ferroelectric materials

US6542285B1 · kind B1 · utility

Assignee

• The Board of Trustees of the Leland Stanford Junior University · US

Inventors

• Robert G. Batchko · San Francisco, US
• Gregory D. Miller · Palo Alto, US
• Robert L. Byer · Stanford, US
• Vladimir Shur · Yekaterinburg, RU
• Martin M. Fejer · Menlo Park, US

Key dates

• Filing date: Jan 28, 2000
• Grant date: Apr 1, 2003
• Expiry date: Jan 28, 2020

Classification

• Technology area (CPC G): Physics
• CPC primary: G02F1/3558
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method for fabricating periodically poled structures. The method produces an electric field within a ferroelectric substrate by applying a voltage waveform to an electrode structure disposed on a surface of the substrate. The waveform raises the electric field magnitude to a level substantially greater than that required to reverse domains within the substrate. Domain reversal continues through to completion at which time the poling field is turned off or substantially reduced to induce spontaneous backswitch poling. The forward poling field is then reapplied to stop the backswitch poling. The ability to selectively enable and terminate backswitching allows for the formation of domain patterns with small feature sizes and high uniformity through large volumes of material.