Nonvolatile memory and semiconductor device with controlled voltage booster circuit
US6542411B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 5, 2001 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Oct 5, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3481
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory includes a control register (CRG) for providing instructions as to basic operations such as writing, erasing, reading, etc., a boosted voltage attainment detecting circuit for detecting whether a voltage boosted by a booster circuit has reached a desired level, a circuit which counts the time required to apply each of write and erase voltages, and a circuit which detects the completion of the writing or erasing. Respective operations are automatically advanced by simple setting of the operation instructions to the control register. After the completion of the operations, an end flag (FLAG) provided within the control register is set to notify the completion of the writing or erasing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.