Stable electrical contact for silicon carbide devices
US6544674B2 · kind B2 · utility
22Cited by
3References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2001 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Aug 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrical contact for a silicon carbide component comprises a material that is in thermodynamic equilibrium with silicon carbide. The electrical contact is typically formed of Ti3SiC2 that is deposited on the silicon carbide component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.