Capacitively sensed micromachined component and method of manufacturing
US6544810B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Aug 31, 2020 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0735
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A capacitively sensed micromachined component includes an electrically insulative substrate (120) having a first side (121) and a second side (122) opposite the first side. The component also includes a first layer (130) adjacent to the second side of the electrically insulative substrate where at least a first portion of the first layer located adjacent to the second side of the electrically insulative substrate is infra-red light absorbing and is also electrically conductive. The component further includes a diffusion and chemical barrier layer (240) encapsulating the first layer and the electrically insulative substrate. The component still further includes a capacitively sensed micromachined device (310) on the diffusion and chemical barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.