Particle distribution method and resulting structure for a layer transfer process
US6544862B1 · kind B1 · utility
40Cited by
79References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 14, 2000 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Jan 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming substrates. The method includes providing a donor substrate; and forming a particle accumulation region at a selected depth in the donor substrate. The method includes diffusing a plurality of particles into the particle accumulation region to add stress to the particle accumulation region; and separating a thickness of material above the selected depth in the donor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.