Transistor design for use in the construction of an electronically driven display
US6545291B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2000 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Aug 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/114
Abstract
A transistor having a channel width, W, and a channel length, L, defined by non-rectangular electrodes. The transistor is a thin film field effect transistor having an insulated gate electrode. One of a source and drain electrodes is connected to a display electrode and one is connected to a data line. The source and drain electrodes can be interdigitated to provide a desired W/L ratio. The gate is connected to a select line. An overlap region between a display electrode and a select line for another pixel defines a capacitor. The transistor is fabricated to be situated behind the display electrode so as to maximize an aperture ratio. The design enables the use of conventional printing methods, such as screen printing, ink jet printing, printing through a stencil, flexo-gravure printing and offset printing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.