Compound semiconductor rectifier device structure
US6545298B2 · kind B2 · utility
0Cited by
6References
11Claims
0Family size
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Inventor
Key dates
| Filing date | Oct 23, 2001 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Oct 23, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
Abstract
A rectifier structure that exhibits a low turn-on voltage and allows rapid switching without ringing is provided. The structure utilizes a thin epitaxial layer interposed between the two layers comprising the rectifier junction. Preferably the epitaxial layer is of the same conductivity as the underlying layer while being comprised of the same material as the outermost layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.