Solid-state image sensor and manufacturing method therefor
US6545301B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 19, 2000 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Dec 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/151
Abstract
A horizontal transfer section is formed on a P-type semiconductor substrate. A floating diffusion layer for receiving signal charges from the horizontal transfer section and a detector MOSFET for detecting any potential change of the floating diffusion layer are further formed. This detector MOSFET has a gate electrode in which an opening is formed. The gate electrode extends toward the floating diffusion layer and the opening is positioned above the floating diffusion layer. As a result, a solid-state image sensor constituted as above, can reduce the area of the floating diffusion layer and can detect signal charges at high sensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.