Solid-state image pickup device
US6545304B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 1, 2000 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Dec 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1534
Abstract
In production of a solid-state image pickup device including a semiconductor substrate, a photoelectric converter element group including a plurality of photoelectric converter elements formed in one column in one surface of the semiconductor substrate, a charge transfer path to transfer signal charge accumulated in the photoelectric converter elements, and readout gates to read signal charge from photoelectric converter elements to feed the charge to the charge transfer path, an ON or ONO film electrically insulates each transfer electrode constituting the charge transfer path from the semiconductor substrate and an oxide insulating film insulates a readout gate electrode constituting the readout gate from the semiconductor substrate to thereby improve electric characteristics of the solid-state image pickup device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.