Structure and method for electrical isolation of optoelectronic integrated circuits
US6545335B1 · kind B1 · utility
207Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 1999 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Dec 31, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18388
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.