Semiconductor device
US6545340B1 · kind B1 · utility
13Cited by
10References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2001 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Mar 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18361
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device of the invention in the form of a superlattice-heterojunction bipolar transistor (SL-HBT) 10 incorporates a superlattice region 16 within an emitter mesa 21. The superlattice region 16 provides a non-linear response to a sufficiently high level of device current to counteract thermal runaway. This protects the device from damaging levels of current. The device 10 may be a radio-frequency SL-HBT with performance equivalent to that of a conventional heterojunction bipolar transistor. The invention may also be implemented as a semiconductor laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.