Patent · US Expired

Small aspect ratio MMIC power amplifier layout

US6545543B2 · kind B2 · utility

5Cited by
10References
35Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 6, 2001
Grant dateApr 8, 2003
Priority date
Expiry dateJul 6, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/10

Abstract

A small aspect ratio, high power MMIC amplifier is disclosed. The small aspect ratio MMIC amplifier is capable of achieving the same power levels as conventional power amplifier designs, but with an aspect ratio of near 1:1, versus 4:1 of conventional power amplifiers. The small aspect ratio MMIC amplifier layout uses two different types of FETs, with all gate fingers of both types of FETs running in the same direction. One type of FET is a conventional FET, in which the gate stripes run parallel to the direction of the output. In the conventional FET, the gate manifold and the drain manifold both generally extend in the x-direction (parallel to each other). The other type of FET has gate fingers that run perpendicular to the direction of the output. In this other type of FET, the gate manifold generally extends in the x-direction, while the drain manifold generally extends in the y-direction (perpendicular to each other). By using two different types of FETs, large gate width power FETs can be placed on two, three or four sides of the MMIC.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.