Semiconductor laser device, semiconductor laser array device and optical fiber transmission system
US6546034B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2000 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Dec 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2224
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes a semiconductor substrate, a first cladding region on one side of the semiconductor substrate, an active layer region, and a second cladding region disposed on an opposite side of the semiconductor substrate. The active layer region is disposed between the semiconductor substrate and the second cladding region. A first semiconductor region is provided on either side of the active layer region in parallel with a traveling direction of light in the active layer region and has an electric resistance higher than that of the active layer region and a refractive index higher than that of the semiconductor substrate. An insulative or semi-insulative second semiconductor region is formed between the first semiconductor region and part of the second cladding region. A first electrode and a second electrode are provided for injecting a current into the active layer region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.