Method of manufacturing a crater-style capacitor for high-voltage radio-frequency applications
US6546607B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2000 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Apr 3, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49165
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for forming a crater-style sampling capacitor. The capacitor includes a dielectric having a smooth crater shaped input electrode on a first surface and output and guard electrodes on a second surface. A sampling capacitor is defined by the input and output electrodes, and a guard capacitor is defined by the input and guard electrodes. The edge of input electrode is positioned below the first surface to increase surface flash over voltage, further, the input electrode is curved to eliminate corona discharge at edges of the input electrode and to reduce self-heating to negligible levels. The apparatus is suitable for high-voltage radio-frequency applications, such as a mass spectrometer, or other high-voltage applications that require an accurate sampling capacitor for amplitude control and accurate sampling of radio-frequency wave-forms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.