Method of producing and depositing a metal film
US6548122B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1999 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Nov 19, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24909
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus are provided in which a metal precursor is formed in a process that includes the following steps: depositing a metal precursor on a substrate; adding an energy to reduce the metal precursor and to precipitate metal on the substrate as a continuous metal layer; and selecting the metal precursor and the energy such that the purity of the continuous metal layer is greater than 85%, and/or the deposited layer has an electrical conductivity substantially that of a pure metal. Methods and apparatus are also provided in which a metal is deposited onto a substrate by a process which includes the following steps: depositing the metal precursor onto the substrate in a desired pattern; and applying sufficient energy to decompose the precursor to precipitate metal in a continuous metal layer in the desired pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.