Color-optimized pixel array design
US6548833B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2000 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Oct 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/182
Abstract
A color optimized CMOS photodiode pixel array is provided. The pixel array employs different dimensions to take advantage of different characteristics of the photodiode physics to produce an enhanced image while minimizing the need for post processing. The design includes a relatively shallow blue pixel photodiode, a deeper green pixel photodiode, and a relatively deep red pixel photodiode. The red pixel photodiode is larger and deeper than the green pixel photodiode, which is larger and deeper than the blue pixel photodiode. Each color pixel photodiode comprises a junction diode and a depletion region. The CMOS construction of the three color pixel photodiodes may vary, but one possible construct of the red pixel photodiode would be an N Well/P Sub diode construct, the green pixel photodiode a N+/P Sub diode construct, and the blue being a N+/P Well or N+/P Sub diode construct.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.