Field-effect transistor, bipolar transistor, and methods of fabricating the same
US6548838B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2000 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Sep 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/251
Abstract
A field-effect transistor of the present invention has first semiconductor layers disposed in at least two regions located above a substrate and spaced apart in a direction parallel to a substrate surface, second semiconductor layers disposed on the respective first semiconductor layers to protrude from the respective side surfaces of the first semiconductor layers, and ohmic electrodes disposed on the respective second semiconductor layers. The field-effect transistor also has a gate electrode formed by self alignment relative to the ohmic electrodes, which is disposed in a region located above the substrate and lying between the first semiconductor layers in spaced relation to the respective side surfaces of the first semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.