Method for producing a thin distributed photodiode structure
US6548878B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 1999 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Nov 23, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A method is shown for producing a distributed PN photodiode having a first active region of the photodiode that can be made arbitrarily thin. A fabrication substrate is doped to have a first conductivity type in order to form the first active region of the photodiode. A layer can also be formed upon the first surface of the fabrication substrate or a first surface of a handling wafer, where the layer can be an oxide layer, where a thickness of the oxide layer can be controlled to form a dielectric refractive reflector, a reflective layer, or a conductive layer. The first surface of the handling substrate is bonded to the first surface of the fabrication substrate. A second surface of the fabrication is then lapped to a obtain a preselected thickness of the first active region. A plurality of second active regions of the photodiode having a second conductivity type is formed on the second surface of the fabrication substrate. A contact having a plurality of connective traces is formed on the second surface of the fabrication substrate, where the connective traces are electrically coupled to the second active regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.