Structure and method for planar lateral oxidation in passive devices
US6548908B2 · kind B2 · utility
196Cited by
2References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 27, 1999 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Dec 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2215
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A passive semiconductor device structure is made using planar lateral oxidation to define a buried oxidized semiconductor structure such as a passive waveguide, microlens or DBR mirror stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.