Optical recording medium
US6551681B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2001 |
| Grant date | Apr 22, 2003 |
| Priority date | — |
| Expiry date | Apr 29, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In order to increase the recording capacity while preventing jitter deterioration and a decrease of the modulation factor and thereby ensuring satisfactory recording characteristics, a first dielectric film, phase recording film, second dielectric film, reflection film and protective film are sequentially formed on a disc substrate having formed lands, grooves and wobbling on one major surface. The recording film is made of a GeInSbTe alloy, and the reflection film is made of an AgPdCu alloy or AlCu alloy. Composition of the GeInSbTe alloy is adjusted to contain Ge in the range of 1 to 8 wt %, In in the range of 2 to 6 wt %, and control Sb/Te in the range of 2.2 to 3.0. Composition of the AgPdCu alloy is adjusted to contain Pd in the range of 0.9 to 1.5 wt % and Cu not more than 1.5 wt %. Composition of the AlCu alloy is adjusted to contain Cu in the not more than 1.5 wt %. Groove depth is controlled in the range of 35 to 45 nm, groove width in the range of 0.35 to 0.50 &mgr;m, thickness of the first dielectric film in the range of 75 to 95 nm, thickness of the recording film in the range of 12 to 20 nm, thickness of the second dielectric film in the range of 16 to 28 nm, and thick…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.