Silicon carbide semiconductor device and method of fabricating the same
US6551865B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2002 |
| Grant date | Apr 22, 2003 |
| Priority date | — |
| Expiry date | Mar 28, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
Abstract
Openings are formed in a laminate of a polycrystalline silicon film and an LTO film on a channel layer. While the laminate is used as a mask, impurities are implanted into a place in the channel layer which is assigned to a source region. Also, impurities are implanted into another place in the channel layer which is assigned to a portion of a second gate region. A portion of the polycrystalline silicon film which extends from the related opening is thermally oxidated. The LTO film and the oxidated portion of the polycrystalline silicon film are removed. While a remaining portion of the polycrystalline silicon film is used as a mask, impurities are implanted into a place in the channel layer which is assigned to the second gate region. Accordingly, the source region and the second gate region are formed on a self-alignment basis which suppresses a variation in channel length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.