Method of forming a conductive coating on a semiconductor device
US6551912B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2001 |
| Grant date | Apr 22, 2003 |
| Priority date | — |
| Expiry date | Apr 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On a semiconductor die, a conductive layer is formed by first attaching a semiconductor wafer to a support wafer, then cutting the semiconductor wafer into dies, and finally depositing a conductive layer on the sides of the dies. The conductive layer is preferably a metal layer, which extends into the support wafer, which ensures that, when the support wafer is removed, the conductive layer extends all the way over the sidewall of the semiconductor die. The method allows the simultaneous application of the conductive layer to many dies. The conductive layer reduces the resistance for currents in the radio frequency range flowing close to the edges of the die due to the skin effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.