Process for manufacturing a semiconductor material wafer comprising single-Crystal regions separated by insulating material regions
US6551944B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2000 |
| Grant date | Apr 22, 2003 |
| Priority date | — |
| Expiry date | Apr 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/763
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process including the steps of: carrying out a directional etching in a semiconductor material body to form trenches having a first width; carrying out an isotropic etching of the semiconductor material body under the trenches to form cavities having a width larger than the trenches; covering the walls of the cavities with dielectric material; depositing non-conducting material different from thermal oxide to fill the cavities at least partially, so as to form a single-crystal island separated from the rest of the semiconductor material body. The isotropic etching permits the formation of at least two adjacent cavities separated by a support region of semiconductor material, which is oxidized together with the walls of the cavities to provide a support to the island prior to filling with non-conducting material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.