Thin film transistor device
US6552361B1 · kind B1 · utility
3Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2000 |
| Grant date | Apr 22, 2003 |
| Priority date | — |
| Expiry date | Dec 16, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6725
Abstract
A thin film transistor (TFT) and method of fabricating the same. A planarization layer of polymer is formed on the interlayer to reduce short-circuit. The planarization layer further reduces the capacitance of the crossover capacitor and the delay time of the LCD panel using the TFT is therefor minimized. A gate thereof can be design under the data line to increase aperture ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.