Semiconductor device with selectively diffused regions
US6552414B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 1999 |
| Grant date | Apr 22, 2003 |
| Priority date | — |
| Expiry date | Aug 27, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate (2) in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first major surface of said semiconducting substrate (2); step 2) diffusing the dopant atoms from said solids-based dopant source into said substrate (2) by a controlled heat treatment step in a gaseous environment surrounding said semi-conducting substrate (2), the dopant from said solids-based dopant source diffusing directly into said substrate (2) to form a first diffusion region (12) and, at the time, diffusing said dopant from said solids-based dopant source indirectly via said gaseous environment into said substrate (2) to form a second diffusion region (15) in at least some areas of said substrate (2) not covered by said pattern; and step 3) forming a metal contact pattern (20) substantially in alignment with said first diffusion region (12) without having etched said second diffusion region (15) substantially.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.