Testing current perpendicular to plane giant magnetoresistance multilayer devices
US6552554B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2001 |
| Grant date | Apr 22, 2003 |
| Priority date | — |
| Expiry date | Dec 6, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/852
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A wafer suitable to be tested for current-perpendicular to the plane resistance includes a substrate, a conductive base layer on the substrate, a magnetic multilayer on the conductive base layer, and a top conductive layer. A testing ring is formed on the magnetic multilayer in a manner whereby it is separated from rest of the magnetic multilayer by a trench in the magnetic multilayer. Within the testing ring, the magnetic multilayer includes a hole. The current perpendicular to the plane resistance of the wafer may be determined by passing a predetermined current perpendicular through the testing ring by contacting a probe to the testing ring and measuring the voltage at the conductive base layer. The probe used in the present invention may be an AFM or a STM probe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.