Crystallogenesis method with magnetic field
US6554895B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2001 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Jun 19, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/917
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a solid single crystal of an electrically conductive material by pulling from a molten mass of this material, the material presenting atom clusters at melt. The method includes: a melt stage so as to obtain a molten mass, the melt stage procuring a colder zone of the molten mass, from which the single crystal will be pulled, and a hotter zone having sufficient temperature to melt the atom clusters; a stage of application to the molten mass of a rotating magnetic field allowing the atom clusters to be displaced from the colder zone to the hotter zone; and a stage of growth by pulling of the single crystal after the atom clusters have been displaced from the colder zone to the hotter zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.