Method for measuring and controlling beam current in ion beam processing
US6554968B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2000 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Jan 5, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/542
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing film thickness control of ion beam sputter deposition films. Great improvements in film thickness control is accomplished by keeping the total current supplied to both the beam and suppressor grids of a radio frequency (RF) in beam source constant, rather than just the current supplied to the beam grid. By controlling both currents, using this method, deposition rates are more stable, and this allows the deposition of layers with extremely well controlled thicknesses to about 0.1%. The method is carried out by calculating deposition rates based on the total of the suppressor and beam currents and maintaining the total current constant by adjusting RF power which gives more consistent values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.