Patent · US Expired

Information recording medium and its manufacturing method

US6554972B1 · kind B1 · utility

52Cited by
12References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 28, 1999
Grant dateApr 29, 2003
Priority date
Expiry dateJun 28, 2019

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S430/146
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

It is an object to improve the recording transfer rate of a phase change recording medium, to reduce the producing costs of the medium, to greatly increase the degree of freedom for the selection of the substrate of the medium, particularly to provide a medium having a structure of Rc<Ra, and to increase the storage capacity of the medium. In order to accomplish this object, a medium, wherein the initial state is an amorphous state immediately after sputtering, has a structure having a unique short-range order. In addition, there is provided a medium wherein the distribution of the number of crystal grains with respect to grain sizes has a plurality of maximum values. Moreover, when a recording operation is carried out by laser beams, an amorphous state band part is formed between tracks. In addition, the thermal conductivity of a recording layer is in a unique range, and contains Kr or Xe in a specific range. Moreover, in the case of a medium of a single-sided double-layer structure having a plurality of recording layers, at least one of the recording layers has any one of the above described characteristics. Moreover, as a method for producing a recording layer having these chara…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.