Ni-plated target diffusion bonded to a backing plate and method of making same
US6555250B2 · kind B2 · utility
17Cited by
26References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 1999 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | May 12, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12944
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention includes a method of forming a heat treated sputtering target assembly. A backing plate is diffusion bonded to a sputtering target to produce a sputtering target assembly. The sputtering target assembly is heat treated to precipitation harden the backing plate of the assembly. The heat treatment includes heating and quenching, with the quenching being performed by immersing the backing plate in a quenchant without submerging the sputtering target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.