Body contact silicon-on-insulator transistor and method
US6555446B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 19, 2000 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Mar 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
Abstract
A method for fabricating a body contact silicon-on-insulator transistor (10) includes forming a semiconductor substrate (12) over an insulator (14) and lightly doping the semiconductor substrate (12) to form a body region (18). The method also includes forming a gate (20) over the semiconductor substrate (12) and separated from the semiconductor substrate (12) by a gate insulator layer (21). The gate (20) defines a source region (22), a drain region (24) and a contact region (26). The method also includes masking a portion (36) of the gate (20) and the contact region (26) and heavily doping the source region (22), the drain region (24) and an unmasked portion (36) of the gate (20) with a material having a conductivity substantially opposite a conductivity of the body region (18).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.